Solution based-spin cast processed organic bistable memory device
Identifieur interne : 000526 ( Main/Repository ); précédent : 000525; suivant : 000527Solution based-spin cast processed organic bistable memory device
Auteurs : RBID : Pascal:13-0142299Descripteurs français
- Pascal (Inist)
- Electronique organique, Circuit bistable, Dispositif à mémoire, Addition étain, Revêtement, Spectrométrie Raman, Spectrométrie FTIR, Caractéristique électrique, Commutation, Effet on off, Tension polarisation, Evaluation performance, Capacité électrique, Couche mince, Alcoxyle, Phénylènevinylène polymère, Oxyde de zinc, Nanoparticule, Oxyde d'indium, Matériau revêtu, Verre, Matériau dopé, 8107, ZnO, ITO.
- Wicri :
- concept : Verre.
English descriptors
- KwdEn :
- Alkoxyl, Bias voltage, Capacitance, Coated material, Coatings, Doped materials, Electrical characteristic, Flip-flop circuits, Fourier-transformed infrared spectrometry, Glass, Indium oxide, Memory devices, Nanoparticle, On off effect, Organic electronics, Performance evaluation, Phenylenevinylene polymer, Raman spectrometry, Switching, Thin film, Tin addition, Zinc oxide.
Abstract
A two terminal organic bistable memory was fabricated by solution based spin casting of thin films of poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV):ZnO nanoparticles onto ITO coated glass. The morphology of the thin films were characterized by Raman and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 1 x 104 when the voltage was swept between -1 V and +1 V. The device maintained its state even after removal of the bias voltage. The device exhibited stable performance at various performance tests. Two distinct capacitance states with hysteresis were observed and we suggest that the switching mechanism involved could be attributed to trapping and detrapping of electrons.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Solution based-spin cast processed organic bistable memory device</title><author><name sortKey="Ramana, Ch V V" uniqKey="Ramana C">Ch. V. V. Ramana</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Discipline of Physics, School of Chemistry and Physics, University of KwaZulu-Natal, Westville Campus, Private Bag X54001</s1><s2>Durban 4000</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Durban 4000</wicri:noRegion></affiliation></author><author><name sortKey="Moodley, M K" uniqKey="Moodley M">M. K. Moodley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Discipline of Physics, School of Chemistry and Physics, University of KwaZulu-Natal, Westville Campus, Private Bag X54001</s1><s2>Durban 4000</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Durban 4000</wicri:noRegion></affiliation></author><author><name sortKey="Kannan, V" uniqKey="Kannan V">V. Kannan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Maity, A" uniqKey="Maity A">A. Maity</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Smart Polymer Group, Polymers and Composites, Materials Science and Manufacturing, Council for Scientific and Industrial Research, PO Box 835</s1><s2>Pretoria</s2><s3>ZAF</s3><sZ>4 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Pretoria</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0142299</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0142299 INIST</idno><idno type="RBID">Pascal:13-0142299</idno><idno type="wicri:Area/Main/Corpus">000F90</idno><idno type="wicri:Area/Main/Repository">000526</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alkoxyl</term><term>Bias voltage</term><term>Capacitance</term><term>Coated material</term><term>Coatings</term><term>Doped materials</term><term>Electrical characteristic</term><term>Flip-flop circuits</term><term>Fourier-transformed infrared spectrometry</term><term>Glass</term><term>Indium oxide</term><term>Memory devices</term><term>Nanoparticle</term><term>On off effect</term><term>Organic electronics</term><term>Performance evaluation</term><term>Phenylenevinylene polymer</term><term>Raman spectrometry</term><term>Switching</term><term>Thin film</term><term>Tin addition</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Electronique organique</term><term>Circuit bistable</term><term>Dispositif à mémoire</term><term>Addition étain</term><term>Revêtement</term><term>Spectrométrie Raman</term><term>Spectrométrie FTIR</term><term>Caractéristique électrique</term><term>Commutation</term><term>Effet on off</term><term>Tension polarisation</term><term>Evaluation performance</term><term>Capacité électrique</term><term>Couche mince</term><term>Alcoxyle</term><term>Phénylènevinylène polymère</term><term>Oxyde de zinc</term><term>Nanoparticule</term><term>Oxyde d'indium</term><term>Matériau revêtu</term><term>Verre</term><term>Matériau dopé</term><term>8107</term><term>ZnO</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A two terminal organic bistable memory was fabricated by solution based spin casting of thin films of poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV):ZnO nanoparticles onto ITO coated glass. The morphology of the thin films were characterized by Raman and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 1 x 10<sup>4</sup> when the voltage was swept between -1 V and +1 V. The device maintained its state even after removal of the bias voltage. The device exhibited stable performance at various performance tests. Two distinct capacitance states with hysteresis were observed and we suggest that the switching mechanism involved could be attributed to trapping and detrapping of electrons.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>81</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Solution based-spin cast processed organic bistable memory device</s1></fA08><fA11 i1="01" i2="1"><s1>RAMANA (CH. V. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>MOODLEY (M. K.)</s1></fA11><fA11 i1="03" i2="1"><s1>KANNAN (V.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAITY (A.)</s1></fA11><fA14 i1="01"><s1>Discipline of Physics, School of Chemistry and Physics, University of KwaZulu-Natal, Westville Campus, Private Bag X54001</s1><s2>Durban 4000</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Smart Polymer Group, Polymers and Composites, Materials Science and Manufacturing, Council for Scientific and Industrial Research, PO Box 835</s1><s2>Pretoria</s2><s3>ZAF</s3><sZ>4 aut.</sZ></fA14><fA20><s1>35-40</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000500605660080</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0142299</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>A two terminal organic bistable memory was fabricated by solution based spin casting of thin films of poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV):ZnO nanoparticles onto ITO coated glass. The morphology of the thin films were characterized by Raman and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 1 x 10<sup>4</sup> when the voltage was swept between -1 V and +1 V. The device maintained its state even after removal of the bias voltage. The device exhibited stable performance at various performance tests. Two distinct capacitance states with hysteresis were observed and we suggest that the switching mechanism involved could be attributed to trapping and detrapping of electrons.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03G02A6</s0></fC02><fC02 i1="02" i2="X"><s0>001D03I02</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07Z</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Electronique organique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Organic electronics</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Electrónica orgánica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Circuit bistable</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Flip-flop circuits</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dispositif à mémoire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Memory devices</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Addition étain</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Tin addition</s0><s5>04</s5></fC03><fC03 i1="04" 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